Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal–insulator–metal capacitor

Author:

Li Ming-Yen,Tsai Bin-Siang,Jiang Pei-Chuen,Wu Hsiao-Che,Wu Yung-Hsien,Lin Yu-Jen

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Memory technology in the future

2. Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics, Honolulu, U.S.A., June 13–15, 2006, Symposium on VLSI Technology;Kil,2006

3. New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

4. Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

5. High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

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