Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers-Reference-Cited by-同舟云学术

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Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers

Published:2016-01 Issue: Volume:598 Page:109-114
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ko Young-Uk,Yun Ho-Jin,Jeong Kwang-Seok,Kim Yu-Mi,Yang Seung-Dong,Kim Seong-Hyeon,Kim Jin-Sup,An Jin-Un,Lee Hi-Deok,Lee Ga-Won^ORCID

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry & Energy, Korea

Ministry of Trade, Industry and Energy

Korea Evaluation Institute of Industrial Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Development of new a-Si/c-Si heterojunction solar cells: ACJ–HIT (artificially constructed junction–heterojunction with intrinsic thin-layer);Makoto;Jpn. J. Appl. Phys.,1992

2. Obtaining a higher Voc in HIT cells;Taguchi;Prog. Photovolt. Res. Appl.,2005

3. Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization;Korte;Sol. Energy Mater. Sol. Cells,2009

4. K. Masuko, M. Shigematsu, T. Hashiguchi, D. Fujishima, M. Kai, N. Yoshimura, T. Yamaguchi, Y. Ichihashi, T. Yamanishi, T. Takahama, M. Taguchi, E. Maruyama, and S. Okamoto, Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell, in . IEEE J. Photovolt. 4 (2014) 1433–1435.

5. Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy;Lau;Appl. Phys. Lett.,1997

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1. Investigation of the tensile strain influence on flicker noise of organic solar cells under dark condition;Organic Electronics;2018-08

2. The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique;Journal of Alloys and Compounds;2017-01

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