The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique

Author:

Orak I.,Kocyigit A.ORCID,Turut A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference41 articles.

1. Application of sol-gel derived films for ZnO/n-Si junction solar cells;Baik;Thin Solid Films,1999

2. Effect of calcination atmosphere on photoluminescence properties of nanocrystalline ZrO2 thin films prepared by sol–gel dip coating method;Lakshmi;Phys. B Condens. Matter,2011

3. Highly efficient optoelectronic properties of doubly doped SnO2 thin film deposited by spin coating technique;Kocyigit;J. Ovonic Res.,2012

4. Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: fabrication and electrical characterization;Kabra;Beilstein J. Nanotechnol.,2014

5. High efficiency of transmittance and electrical conductivity of V doped ZnO used in solar cells applications;Boujnah;J. Alloys Compd.,2016

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