High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics-Reference-Cited by-同舟云学术

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Published:2010-05 Issue:15 Volume:518 Page:4380-4384
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lukosius M.,Walczyk Ch.,Fraschke M.,Wolansky D.,Richter H.,Wenger Ch.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association (SIA) (2009), http://public.itrs.net.

2. Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

3. Atomic - vapour - deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

4. HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system

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1. Effect of Deposition Temperature on the Surface, Structural, and Mechanical Properties of HfO2 Using Chemical Vapor Deposition (CVD);Coatings;2022-11-12

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3. Correlating point defects with mechanical properties in nanocrystalline TiN thin films;Materials & Design;2021-09

4. X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films;Crystals;2021-02-27

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