Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga

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Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films

Published:2014-01 Issue: Volume:551 Page:195-199
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Shinozaki Bunju,Hidaka Kazuya,Ezaki Syouhei,Makise Kazumasa,Asano Takayuki,Tomai Shigekazu,Yano Koki,Nakamura Hiroaki

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Electrical properties of sprayed tin oxide layers

2. High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron dephasing processes in the thin and thick Ta-doped SnO2 films;Physica B: Condensed Matter;2022-12

2. The enhanced Coulomb interaction in three-dimensional indium tin oxide films;Journal of Applied Physics;2020-09-28

3. Electron effective mass and electronic structure in nonstoichiometric amorphous Indium Gallium Zinc Oxide films;Journal of Alloys and Compounds;2020-01

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