The enhanced Coulomb interaction in three-dimensional indium tin oxide films-Reference-Cited by-同舟云学术

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The enhanced Coulomb interaction in three-dimensional indium tin oxide films

Published:2020-09-28 Issue:12 Volume:128 Page:125109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Yujie¹^ORCID,Wu Yanan²,Wang Gongtang³,Wang Wenjie⁴,Liu Wenchao¹,Wang Rui¹,Ding Pengfei¹

Affiliation:

1. School of Science, Tianjin University of Technology, Tianjin 300384, China

2. Tianjin International Center for Nanoparticles and Nanosystems, Tianjin University, Tianjin 300072, China

3. School of Physics and Electronics, Shandong Normal University, Jinan 250358, China

4. International Iberian Nanotechnology Laboratory (INL), Ave. Mestre Jose Veiga, 4715-330 Braga, Portugal

Funder

Natural Science Foundation of Tianjin City

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021192

Reference37 articles.

1. Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles

2. Electrochemically intercalated indium-tin-oxide/poly(3-hexylthiophene): A solid-state heterojunction solar cell

3. Mobility and carrier density in nanoporous indium tin oxide films

4. Electronic conduction properties of indium tin oxide: single-particle and many-body transport

5. Band-gap widening in heavily Sn-dopedIn2O3

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1. Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO₃;ACS Applied Materials & Interfaces;2024-08-17

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