Study of Cu diffusion behavior in carbon rich SiCN:H films deposited from trimethylphenylsilane
Author:
Funder
RFBR
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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4. Izobutyl silane precursors for SiCH low-k cap layer beyond the 22nm node: analysis of film structure for compatibility of low k-value and high barrier properties;Shimizu;Jpn. J. Appl. Phys.,2011
5. Comprehensive comparison of electrical and reliability characteristics of various copper barrier films;Cheng;J. Vac. Sci. Technol. B,2011
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