The effect of line width on stress-induced voiding in Cu dual damascene interconnects-Reference-Cited by-同舟云学术

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The effect of line width on stress-induced voiding in Cu dual damascene interconnects

Published:2006-05 Issue:1-2 Volume:504 Page:298-301
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Shao W.,Gan Z.H.,Mhaisalkar S.G.,Chen Zhong,Li Hongyu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. IEEE Interconnect Technology Conference Proceedings;Park,2002

2. IEEE Interconnect Technology Conference Proceedings;Kawano,2003

3. IEEE Interconnect Technology Conference Proceedings;Gan,2002

4. Finite‐element modeling of stress distribution and migration in interconnecting studs of a three‐dimensional multilevel device structure

5. Stress-induced void formation in metallization for integrated circuits

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2. Deformation mechanisms, microstructural evolution and mechanical properties in small-scaled face-centered-cubic metallic thin films;Nano Materials Science;2020-03

3. Localized Mechanical Stress Induced Ionic Redistribution in a Layered LiCoO2 Cathode;ACS Applied Materials & Interfaces;2016-10-24

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