Stress-induced void formation in metallization for integrated circuits-Reference-Cited by-同舟云学术

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Stress-induced void formation in metallization for integrated circuits

Published:1993-12 Issue:5 Volume:11 Page:191-241
ISSN:0927-796X
Container-title:Materials Science and Engineering: R: Reports
language:en
Short-container-title:Materials Science and Engineering: R: Reports

Author:

Okabayashi Hidekazu

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference116 articles.

1. Electromigration in metals

2. Improved metallization for surface acoustic wave devices

3. J. Klema, R. Pyle and E Domangue, in Proc. 1984 Int. Reliability Physics Symp., IEEE, New York, p. 1.

4. J. Curry, G. Fitzgibbon, Y. Guan, R. Muollo, G. Nelson and A. Thomas, in Proc. 1984 Int. Reliability Physics Symp., IEEE, New York, p. 6.

5. Optical properties of Nd3+in tellurite and phosphotellurite glasses

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2. In-situ revealing the degradation mechanisms of Pt film over 1000 °C;Journal of Materials Science & Technology;2021-12

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5. Voiding Phenomena in Copper-Copper Bonded Structures: Role of Creep;ECS Journal of Solid State Science and Technology;2015

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