A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Growth of crystalline 3C‐SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane
2. Spectroscopic and thermal studies of a-SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane
3. Kinetics of silicon carbide CVD: surface decomposition of silacyclobutane and methylsilane
4. Deposition of Silicon Carbide Thin Films from 1,1-Dimethyl-1-Silacyclobutane
5. Chemical vapor deposition of silicon carbide from 1,3-disilacyclobutane
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1. Thermal Decomposition Mechanism of Tetraethylsilane by Flash Pyrolysis Vacuum Ultraviolet Photoionization Mass Spectrometry and DFT Calculations: The Competition between β-Hydride Elimination and Bond Homolysis;The Journal of Physical Chemistry A;2023-04-28
2. Crystalline tantalum carbide and ditungsten carbide formation via hot wire chemical vapor deposition using the precursor of 1-methylsilacyclobutane;Surface and Coatings Technology;2017-10
3. Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09
4. Hydrogen elimination from the dissociation of methyl-substituted silanes on tungsten and tantalum surfaces;Canadian Journal of Chemistry;2016-04
5. Promotion of Exocyclic Bond Cleavages in the Decomposition of 1,3-Disilacyclobutane in the Presence of a Metal Filament;The Journal of Physical Chemistry A;2015-01-20
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