Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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1. Tailoring the electrical characterization of epitaxialCuInGaSe2 thin film-based device for photodiode appliances;Superlattices and Microstructures;2020-06
2. Photoluminescence of CuInSe2/GaN and CuInSe2/InN;Journal of Luminescence;2019-09
3. Epitaxial Cu(In,Ga)Se 2 Thin Films on Mo Back Contact for Solar Cells;physica status solidi (a);2019-05-29
4. Characterization of structure and physical properties of CuInSe2 films prepared from chlorides under different conditions;Results in Physics;2019-03
5. Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy;Journal of Crystal Growth;2017-10
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