Epitaxial Cu(In,Ga)Se 2 Thin Films on Mo Back Contact for Solar Cells-Reference-Cited by-同舟云学术

Epitaxial Cu(In,Ga)Se 2 Thin Films on Mo Back Contact for Solar Cells

Published:2019-05-29 Issue:16 Volume:216 Page:1900164
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ando Yuta¹,Khatri Ishwor²,Matsumori Hironori³,Sugiyama Mutsumi¹²,Nakada Tokio²

Affiliation:

1. Faculty of Science and TechnologyTokyo University of Science2641 YamazakiNodaChiba278‐8510Japan

2. Research Institute for Science and TechnologyTokyo University of Science2641 YamazakiNodaChiba278‐8510Japan

3. Department of Electrical Engineering and ElectronicsAoyama Gakuin University5‐10‐1, SagamiharaKanagawa229‐8558Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900164

Reference32 articles.

1. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

2. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

3. Direct growth of heteroepitaxial CuInSe2layers on Si substrates

4. Rotational twins in heteroepitaxial CuInSe2 layers on Si(111)

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