Tailoring the electrical characterization of epitaxialCuInGaSe2 thin film-based device for photodiode appliances-Reference-Cited by-同舟云学术

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Tailoring the electrical characterization of epitaxialCuInGaSe2 thin film-based device for photodiode appliances

Published:2020-06 Issue: Volume:142 Page:106505
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ashery A.,Farag A.A.M.,Elnasharty Mohamed M.M.,Nasr Mahmoud,Azab A.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference61 articles.

1. Two-dimensional CuIn1−xGaxSe2 nano-flakes by pulse electrodeposition for photovoltaic applications

2. Semi-transparent photovoltaics using ultra-thin Cu(In,Ga)Se2 absorber layers prepared by single-stage co-evaporation

3. What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

4. Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

5. Development of flexible Cd-free Cu(In,Ga)Se2 solar cell on stainless steel substrate through multi-layer precursor method

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