On the interpretation of structural and light emitting properties of InGaN/GaN epitaxial layers grown above and below the critical layer thickness
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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2. Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells;OSA Continuum;2019-03-18
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4. Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces;Journal of Applied Physics;2017-05-21
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