Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/6/067303/pdf
Reference42 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. GaN Growth Using GaN Buffer Layer
4. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
5. Multidimensional quantum well laser and temperature dependence of its threshold current
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