Zinc oxide thin film transistors using MgO–Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate-Reference-Cited by-同舟云学术

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Zinc oxide thin film transistors using MgO–Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate

Published:2010-03 Issue:10 Volume:518 Page:2843-2846
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cho Nam Gyu,Kim Dong Hun,Kim Ho-Gi,Hong Jae-Min,Kim Il-Doo

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RETRACTED: Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors;Applied Surface Science;2016-12

2. Synthesis and characterization of composites of ceramic nano-particles with non-conducting polymers for dielectric materials production;Journal of Materials Science: Materials in Electronics;2016-10-18

3. Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7gate insulator on performance of ZnO based thin film transistors;Journal of Semiconductors;2016-07

4. Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y)gate insulators fabricated by RF sputtering;Optical Engineering;2016-06-21

5. Effect of excess Bi2O3 on structure and performance of ZnO-based thin film transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-11

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