Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y)gate insulators fabricated by RF sputtering-Reference-Cited by-同舟云学术

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Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y)gate insulators fabricated by RF sputtering

Published:2016-06-21 Issue:6 Volume:55 Page:067106
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Ye Wei¹,Ren Wei¹,Shi Peng¹,Jiang Zhuangde²

Affiliation:

1. Xi’an Jiaotong University, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, No. 28, Xianning West Road, Xi’an, Shaanxi 710049, China

2. Xi’an Jiaotong University, State Key Laboratory for Manufacturing Systems Engineering, Xi’an 710049, China

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference27 articles.

1. Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study

2. Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator

3. Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors

4. Preparing ZnO nanowires in mesoporous TiO 2 photoanode by an in-situ hydrothermal growth for enhanced light-trapping in quantum dots-sensitized solar cells

5. Optical engineering by the nanocomposites of ZnO-CdS/TiO₂

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