Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors-Reference-Cited by-同舟云学术

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Characterization on Bandedge Electronic Structure of MgO Added Bi[sub 1.5]Zn[sub 1.0]Nb[sub 1.5]O[sub 7] Gate Dielectrics for ZnO-Thin Film Transistors

Published:2011 Issue:1 Volume:14 Page:G4
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Cho Nam Gyu,Seo Hyungtak,Kim Dong Hun,Kim Ho-Gi,Kim Jinwoo,Kim Il-Doo

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference16 articles.

1. A sound barrier for silicon?

2. ZnO-based transparent thin-film transistors

3. Recent progress in transparent oxide semiconductors: Materials and device application

4. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

5. Oxide semiconductors: Order within the disorder

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the electrical properties of ZnO thin film transistors using pyrochlore Bi1.5Zn(1+y)Nb1.5O(7+y)gate insulators fabricated by RF sputtering;Optical Engineering;2016-06-21

2. Effect of excess Bi2O3 on structure and performance of ZnO-based thin film transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-11

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