Effects of carbide and nitride inclusions on diamond scribing of multicrystalline silicon for solar cells
Author:
Funder
SiSoC
NSF
I/UCRC
Publisher
Elsevier BV
Subject
General Engineering
Reference17 articles.
1. Multicrystalline silicon for solar cells;Möller;Thin Solid Films,2005
2. SiC and Si3N4 inclusions in multicrystalline silicon ingots;SØiland;Materials Science in Semiconductor Processing,2004
3. Electronic activity of SiC precipitates in multicrystalline solar silicon;Bauer;Physica Status Solidi A,2007
4. Improving solar grade silicon by controlling extended defect generation and foreign atom defect interactions;Möller;Applied Physics A,2009
5. A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cells;Lotnyk;Solar Energy Materials & Solar Cells,2008
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1. Influences of hard inclusions on processing stress in diamond multi-wire sawing multi-crystalline silicon;Materials Science in Semiconductor Processing;2022-06
2. Wear of diamond in scribing of multi-crystalline silicon;Journal of Applied Physics;2018-08-14
3. Fixed abrasive machining of non-metallic materials;CIRP Annals;2018
4. Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon;Journal of the American Ceramic Society;2017-01-23
5. Review on grinding-induced residual stresses in metallic materials;The International Journal of Advanced Manufacturing Technology;2016-06-11
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