Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide-Reference-Cited by-同舟云学术

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Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide

Published:2020-03 Issue: Volume:62 Page:71-82
ISSN:0141-6359
Container-title:Precision Engineering
language:en
Short-container-title:Precision Engineering

Author:

Chen Junyun,Ding Fei,Luo Xichun,Rao Xiaoshuang,Sun Jining

Funder

EPSRC

National Key R&D Program of China

National Natural Science Foundation of China

Hebei Province Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Engineering

Reference41 articles.

1. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies;Yoon;Nature,2010

2. Anomalous enhancement of the absorption coefficient of GaAs in a p-n junction;Sun;Superlattice Microstruct,2018

3. Design and optimization of GaAs photovoltaic converter for laser power beaming infrared;Shan;Phys Technol,2015

4. Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy;Wu;Nano Lett,2010

5. Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices;Adokanou;Microelectron Reliab,2015

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