Anomalous enhancement of the absorption coefficient of GaAs in a p-n junction-Reference-Cited by-同舟云学术

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Anomalous enhancement of the absorption coefficient of GaAs in a p-n junction

Published:2018-10 Issue: Volume:122 Page:80-84
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sun Ling,Wang Lu,Liu Jie,Ma Ziguang,Jiang Yang,Jia Haiqiang,Wang Wenxin,Chen Hong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Photovoltaic Technology: The Case for Thin-Film Solar Cells

2. Photoelectrochemical cells

3. Design and Realization of Wide-Band-Gap ($\sim$2.67 eV) InGaN p-n Junction Solar Cell

4. A review of solar photovoltaic technologies

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1. Solid–liquid heterojunction UV photoelectrochemical photodetector based on WO3 nanosheets and acidic electrolyte;Journal of Applied Physics;2024-06-03

2. Enhanced absorption in the space charge region of GaAs solar cells;EPL (Europhysics Letters);2021-11-24

3. Enhanced absorption process in the thin active region of GaAs based p–i–n structure*;Chinese Physics B;2021-09-01

4. Origin of anomalous enhancement of the absorption coefficient in a PN junction*;Chinese Physics B;2021-09-01

5. Fundamental study of ductile-regime diamond turning of single crystal gallium arsenide;Precision Engineering;2020-03

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