Photochemically combined mechanical polishing of N-type gallium nitride wafer in high efficiency-Reference-Cited by-同舟云学术

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Photochemically combined mechanical polishing of N-type gallium nitride wafer in high efficiency

Published:2019-01 Issue: Volume:55 Page:14-21
ISSN:0141-6359
Container-title:Precision Engineering
language:en
Short-container-title:Precision Engineering

Author:

Ou Li-Wei,Wang Ya-Hui,Hu Hui-Qing,Zhang Liang-Liang,Dong Zhi-Gang,Kang Ren-Ke,Guo Dong-Ming,Shi Kang

Funder

National Natural Science Foundation of China

Ministry of Education

Publisher

Elsevier BV

Subject

General Engineering

Reference43 articles.

1. Surface preparation of substrates from bulk GaN crystals;Hanser;J Cryst Growth,2007

2. GaN: processing, defects, and devices;Pearton;J Appl Phys,1999

3. Effects of polarity and surface treatment on Ga- and N-polar bulk GaN;Foussekis;J Vac Sci Technol B,2012

4. Fabrication and performance of GaN electronic devices;Pearton;Mater Sci Eng R,2000

5. Fabrication of GaN wafers for electronic and optoelectronic devices;Xu;Opt Mater,2003

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