A luminescence study of defects and internal strains in ion-implanted silicon on sapphire films
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Silicon films on sapphire
2. Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility
3. The 1018 meV (W or I1) vibronic band in silicon
4. Noble Gas Atoms as Chemical Impurities in Silicon
5. Uniaxial stress study of photoluminescence defects created by noble-gas implantation into silicon
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1. Si-based light emitters synthesized with Ge+ ion bombardment;Journal of Applied Physics;2021-10-21
2. Mechanism of light emission in low energy ion implanted silicon;Journal of Luminescence;2011-12
3. Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing;Physica B: Condensed Matter;2001-12
4. Luminescence of silicon films on sapphire irradiated with high-energy particles;Journal of Applied Spectroscopy;1999-05
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