Stoichiometry of III–V compounds
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference122 articles.
1. Annealing ofN-Type GaAs under Excess Arsenic Vapor
2. Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure
3. Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure
4. Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method
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