Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped silicon-Reference-Cited by-同舟云学术

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Strong dopant dependence of implantation defect accumulation and amorphisation in highly doped silicon

Published:1986-07 Issue:8 Volume:116 Page:399-402
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Dvurechenskii A.V.,Groetzschel R.,Popov V.P.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference12 articles.

1. Disorder production and amorphisation in ion implanted silicon

2. Physical processes in irradiated semiconductors,1977

3. Radiation effects in semiconductors;Swanson,1971

4. Radiation effects in semiconductors,1968

5. A survey of semiconductor radiation techniques;Bolotov,1983

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1. Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration;MRS Proceedings;1998

2. Relevance of atomic collisions in low-dimensional structure physics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04

3. Amorphous-crystal silicon interfaces: structure and movement under ion beam irradiation;Applied Surface Science;1992-01

4. Development of ion implantation equipment in the USSR;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

5. Rapid thermal annealing of hot implants in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03

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