Noncrucial Role of the Defects in the Splitting for Hydrogen Implanted Silicon With High Boron Concentration

Abstract

AbstractThe present work deals with the investigation of the electrical and structural properties of heavily boron-doped silicon irradiated by hydrogen. Blistering and splitting processes are enhanced with an increase in boron concentration in the crystal. The measured values of perpendicular strain are over 0.7% which corresponds to a gas overpressure of 0.5 GPa. Processes which lead to blistering and splitting is better described in the frame of a gas pressure model than a model of local stress caused by the defects.