Intersections of two stacking faults in zincblende GaN
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference22 articles.
1. Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy;Dasilva;Ultramicroscopy,2017
2. Improving radiative recombination efficiency of green light-emitting diodes;Ding;Mater. Sci. Tech. Ser.,2018
3. A simple approach to temperature dependence of strain energy: application to GaN-based semiconductors;Ito;J. Cryst. Growth.,2007
4. Structural properties of undoped and doped cubic GaN grown on SiC(001);Martinez-Guerrero;J. Appl. Phys.,2002
5. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates;Kemper;J. Cryst. Growth.,2011
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