Electromechanical field effects in InAs/GaAs quantum dots based on continuum k→·p→ and atomistic tight-binding methods-Reference-Cited by-同舟云学术

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Electromechanical field effects in InAs/GaAs quantum dots based on continuum k→·p→ and atomistic tight-binding methods

Published:2021-09 Issue: Volume:197 Page:110678
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Barettin Daniele,Pecchia Alessandro,Auf der Maur Matthias,Di Carlo Aldo,Lassen Benny,Willatzen Morten

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference48 articles.

1. L.C. Lew Yan Voon, Y. Zhang, B. Lassen, M. Willatzen, Qihua Xiong, P.C. Eklund, J. Nanosci. Nanotechnol. 8 (2008) 1.

2. On the Farsightedness (hyperopia) of the Standard k � p Model

3. Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

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3. State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots;Nanomaterials;2023-06-07

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