Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.235311/fulltext
Reference47 articles.
1. Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
2. Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. Electroluminescence in vertically aligned quantum dot multilayer light‐emitting diodes fabricating by growth‐induced islanding
5. Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
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