Characterization of two-dimensional Ga1−Al N ordered alloys with varying chemical composition-Reference-Cited by-同舟云学术

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Characterization of two-dimensional Ga1−Al N ordered alloys with varying chemical composition

Published:2019-09 Issue: Volume:167 Page:13-18
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Kanli M.,Onen A.,Mogulkoc A.,Durgun E.

Funder

National Center for High Performance Computing of Turkey

TUBITAK

TUBA-GEBIP

AYP

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference64 articles.

1. Perspectives on future directions in III-N semiconductor research

2. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

3. III-V compound SC for optoelectronic devices

4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional III-nitride alloys: electronic and chemical properties of monolayer Ga_(1−x)Al_xN;Physical Chemistry Chemical Physics;2023

2. A pathway toward high-throughput quantum Monte Carlo simulations for alloys: A case study of two-dimensional (2D) GaSxSe1−x;The Journal of Chemical Physics;2021-11-21

3. Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1–xAlxN, Al1–xGaxN, and Ga1–xInxN);ACS Applied Materials & Interfaces;2020-09-18

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