Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique-Reference-Cited by-同舟云学术

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Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

Published:2015-06 Issue: Volume:104 Page:219-224
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Shen T.M.,Wang S.J.,Tung Y.T.,Hwang R.L.,Wu C.C.,Wu Jeff,Diaz Carlos H.

Funder

Taiwan Semiconductor Manufacturing Company

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference14 articles.

1. Mechanism of Stress Memorization Technique (SMT) and Method to Maximize Its Effect

2. Strain mapping of Si devices with stress memorization processing

3. Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular-dynamics simulations of solid phase epitaxy in silicon: Effects of system size, simulation time, and ensemble;Japanese Journal of Applied Physics;2018-08-23

2. Kinetic Monte Carlo simulation for semiconductor processing: A review;Progress in Materials Science;2018-03

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