Monte Carlo simulation of silicon nanocrystal formation in the presence of impurities in a SiN x matrix
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference8 articles.
1. Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition
2. On the origin of Si nanocrystal formation in a Si suboxide matrix
3. Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films
4. Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (⩽200°C)
5. Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness;Silicon;2023-03-27
2. Determination of the size dispersion of amorphous silicon quantum dots from a silicon nitride film containing silicon nanocrystals;Optik;2020-04
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