Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

Author:

Mangasa Simanjuntak Firman,Chandrasekaran Sridhar,Panda Debashis,Saleem Aftab,Prodromakis Themis

Abstract

The capability of memristor devices to perform weight changes upon electrical pulses mimics the analogous firing mechanism in biological synapses. This capability delivers the potential for neuromorphic computing and pushes renewed interests in fabricating memristor with analog characteristics. Nevertheless, memristors could often exhibit digital switching, either during the set, reset, or both processes that degenerate their synaptic capability, and nanodevice engineers struggle to redesign the device to achieved analog switching. This chapter overviews some important techniques to transform the switching characteristics from digital to analog in valence change and electrochemical metallization types memristors. We cover physical dynamics involving interfacial diffusion, interfacial layer, barrier layer, deposition, and electrode engineering that can induce digital-to-analog switching transformation in memristor devices.

Publisher

IntechOpen

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A CMOS-based Characterisation Platform for Emerging RRAM Technologies;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

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