Band Gap Modulated Tunnel FET
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Publisher
InTech
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http://www.intechopen.com/download/pdf/60412
Reference17 articles.
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2. Royer CL, Mayer F. Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture. In: 10th International Conference on Ultimate Integration of Silicon 2009; 18–20 March 2009. Aachen: IEEE; 2009. pp. 53-56. DOI: 10.1109/ulis.2009.4897537
3. Ahish S, Sharma D, Kumar YBN, Vasantha MH. Performance enhancement of novel InAs/Si hetero double-gate tunnel FET using Gaussian doping. IEEE Transactions on Electron Devices. 2016;63(1):288-295. DOI: 10.1109/ted.2015.2503141
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