Drain current model for a hetero‐dielectric single gate tunnel field effect transistor ( HDSG TFET )-Reference-Cited by-同舟云学术

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Drain current model for a hetero‐dielectric single gate tunnel field effect transistor ( HDSG TFET )

Published:2021-12-14 Issue: Volume: Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Singh Ajay Kumar¹,Fui Tan Chun²,Soong Lim Way³

Affiliation:

1. Electronics and Communication Engineering NIIT University Alwar India

2. Faculty of Information Science Technology Multimedia University‐Jalan Ayer Keroh Lama Melaka Malaysia

3. Faculty of Engineering and Technology Multimedia University‐Jalan Ayer Keroh Lama Melaka Malaysia

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2980

Reference43 articles.

1. Transistor scaling with novel materials

2. Enhanced critical electrical characteristics in a nanoscale low‐voltage SOI MOSFET with dual tunnel diode;Anvarifard MK;IEEE Trans Electron Devices,2015

3. Junctionless Transistors: Physics and Properties

4. A Nanoscale‐Modified band energy junctionless transistor with considerable progress on the electrical and frequency issue

5. Junctionless transistors: state‐of‐the‐art;Nowbahari A;Electronics,2020

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