Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts-Reference-Cited by-同舟云学术

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Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts

Published:2011-10-10 Issue: Volume: Page:
ISSN:
Container-title:Silicon Carbide - Materials, Processing and Applications in Electronic Devices
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Author:

Kumar Sanjeev,Akhtar Jamil

Publisher

InTech

Link

http://www.intechopen.com/download/pdf/21145

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The extraction of gate oxide thickness on silicon carbide wide-bandgap material using thermal oxidation based regression techniques for high-power applications;AIP Conference Proceedings;2024

2. TSiCV Based Silicon Carbide Interposer Technology;2023 Smart Systems Integration Conference and Exhibition (SSI);2023-03-28

3. Optimization of thermal oxidation for 4H-SiC and fabricate/characterize MOS capacitor;IOP Conference Series: Materials Science and Engineering;2021-03-01

4. ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation;The Journal of Physical Chemistry A;2017-11-09

5. ReaxFF molecular dynamics study on oxidation behavior of 3C-SiC: Polar face effects;Chinese Physics B;2015-09

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