A 23–31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8894014/8910673/08910749.pdf?arnumber=8910749
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 23 – 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-06
3. A 27–35 GHz wideband PIN-diode limiter low noise amplifier MMIC with sub-2.4 dB noise figure;Microelectronics Journal;2022-08
4. 18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA;2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2020-11-16
5. An 18–31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness;IEEE Microwave and Wireless Components Letters;2020-09
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