Comparison of a Copper and Aluminium SiGe BEOL option for power amplifiers above 200 GHz
Author:
Affiliation:
1. Karlsruhe Institute of Technology,Karlsruhe
Funder
Deutsche Forschungsgemeinschaft
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9924553/9924623/09924789.pdf?arnumber=9924789
Reference7 articles.
1. A 239–298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications
2. Active BALUN with 40 GHz bandwidth at 257 GHz in 130 nm SiGe:C
3. A 13.5-dBm 200–255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS
4. A 250-GHz Differential SiGe Amplifier With 21.5-dB Gain for Sub-THz Transmitters
5. A 220-GHz Power Amplifier With 22.5-dB Gain and 9-dBm P sat in 130-nm SiGe
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