A 239–298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications-Reference-Cited by-同舟云学术

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A 239–298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications

Published:2021-09-13 Issue: Volume: Page:
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Container-title:ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)
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Author:

Bucher Thomas,Grzyb Janusz,Hillger Philipp,Rucker Holger,Heinemann Bernd,Pfeiffer Ullrich R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9567713/9567736/09567853.pdf?arnumber=9567853

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19

2. A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2024-03

3. A 275-GHz InP HBT H-Band Amplifier With Transmission Line-Based Capacitively Coupled Resonator Matching Technique;IEEE Transactions on Terahertz Science and Technology;2023-11

4. 305-GHz Cascode Power Amplifier Using Capacitive Feedback Fabricated Using SiGe HBT's with f_max of 450 GHz;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11

5. A 220-GHz High Linearity Power Amplifier with 25.7-dB Gain and 9.7-dB P_SAT;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

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