High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG-Reference-Cited by-同舟云学术

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High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

Published:2019-06 Issue: Volume: Page:
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Container-title:2019 Symposium on VLSI Technology
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Author:

Capogreco E.,Arimura H.,Witters L.,Vohra A.,Porret C.,Loo R.,De Keersgieter A.,Dupuy E.,Marinov D.,Hikavyy A.,Sebaai F.,Mannaert G.,Ragnarsson L.-A.,Siew Y. K.,Vrancken C.,Opdebeeck A.,Mitard J.,Langer R.,Sanchez E. Altamirano,Holstetns F.,Demuynck S.,Barla K.,De Heyn V.,Mocuta D.,Collaert N.,Horiguchi N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8766306/8776475/08776558.pdf?arnumber=8776558

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of CFETs with Vertically Stacked p-SiGe/n-Si Channels by SiGe/Ge/Si Multilayer Epitaxy and Ge Selective Etching;ACS Applied Electronic Materials;2024-05-31

2. Channel Material Benchmarking of Si and Ge n- and pMOSFETs Considering Effects of Strain and Operating Temperature;IEEE Transactions on Electron Devices;2023-08

3. Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications;Scientific Reports;2023-06-09

4. Germanium Nanosheet-FETs Scaled to Subnanometer Node Utilizing Monolithically Integrated Lattice Matched Ge/AlAs and Strained Ge/InGaAs;IEEE Transactions on Electron Devices;2023-03

5. Data-driven multi-objective optimization with neural network-based sensitivity analysis for semiconductor devices;Engineering Applications of Artificial Intelligence;2023-01

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