Power cycling methods for SiC MOSFETs-Reference-Cited by-同舟云学术

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Power cycling methods for SiC MOSFETs

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Herold C.,Sun J.,Seidel P.,Tinschert L.,Lutz J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988994.pdf?arnumber=7988994

Cited by 59 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-12

2. DC Power Cycling Test and Lifetime Prediction for SiC MOSFETs;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05

3. Influence of SiC chip thickness on the power cycling capability of power electronics assemblies – A comprehensive numerical study;Microelectronics Reliability;2023-11

4. Online Threshold Voltage Monitoring at SiC Power Devices during Power Cycling Test and Possible Consequences;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

5. Reliability Improvement of 3.3 kV Full-SiC Power Modules for Power Cycling Tests With Sintered Copper Die Attach Technology;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-09

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