Power cycling methods for SiC MOSFETs-Reference-Cited by-同舟云学术

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Power cycling methods for SiC MOSFETs

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Herold C.,Sun J.,Seidel P.,Tinschert L.,Lutz J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988994.pdf?arnumber=7988994

Cited by 69 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs;IEEE Transactions on Power Electronics;2024-09

2. Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests;Solid State Phenomena;2024-08-26

3. Digital Twin-Based Lifetime Estimation of SiC Power Modules;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

4. Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test;Energies;2024-05-24

5. Investigations of Off-line Calibration and Consistency of SiC MOSFETs with Different Gate Structures;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

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