Negative dynamic Ron in AlGaN/GaN power devices-Reference-Cited by-同舟云学术

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Negative dynamic Ron in AlGaN/GaN power devices

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Moens P.,Uren M. J.,Banerjee A.,Meneghini M.,Padmanabhan B.,Jeon W.,Karboyan S.,Kuball M.,Meneghesso G.,Zanoni E.,Tack M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988902.pdf?arnumber=7988902

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25

2. Investigation of Off-state Stress Time-Dependent Dynamic On-resistance of Commercial High Voltage GaN HEMTs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

3. Temperature-Dependent Dynamic R_on of GaN E-HEMTs: The Impact of p-GaN Drain;IEEE Transactions on Electron Devices;2023-07

4. 10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review;Microelectronics Reliability;2022-12

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