Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
National Natural Science Foundation of China
Delta Power Electronics Science and Education Development Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10149045.pdf?arnumber=10149045
Reference40 articles.
1. Negative dynamic Ron in AlGaN/GaN power devices
2. Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT
3. Hole-Induced Degradation in ${E}$ -Mode GaN MIS-FETs: Impact of Substrate Terminations
4. Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices
5. Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolithic Investigation of Hydrogen Plasma-Treated and Etched p-GaN Gate HEMTs Under OFF-State Drain Stress;IEEE Transactions on Electron Devices;2024-06
2. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping;IEEE Transactions on Electron Devices;2024-01
3. Investigation on Dynamic On-Resistance of GaN Power Devices Using Double Pulse Test;Lecture Notes in Electrical Engineering;2024
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