Investigation of Gate Current Shaping for SiC-based Power Modules on Electrical Drive System Power Losses
Author:
Affiliation:
1. Robert Bosch GmbH,Renningen,Germany
2. Technical University of Munich,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570513.pdf?arnumber=9570513
Reference8 articles.
1. Voltage gradient limitation of IGBTS by optimised gate-current profiles
2. Experimental Investigation on the Transient Switching Behavior of SiC MOSFETs Using a Stage-Wise Gate Driver
3. Effciency of an Electrical Machine in Electric Vehicle Application
4. Energy optimal control of an electrically excited synchronous motor used as traction drive
5. Influence of PWM switching frequency on the losses in PM machines
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3. Digital Gate ICs for Driving and Sensing Power Devices to Achieve Low-Loss, Low-Noise, and Highly Reliable Power Electronic Systems;2023 IEEE Custom Integrated Circuits Conference (CICC);2023-04
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