High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes
Author:
Affiliation:
1. Millimeter-Wave Electronics Laboratory (MWE),ETH Zurich,Zürich,Switzerland,8092
2. Institute of Electromagnetic Fields (IEF),ETH Zurich,Zürich,Switzerland,8092
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10115459/10115461/10117062.pdf?arnumber=10117062
Reference12 articles.
1. Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys
2. Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes
3. Resonant cavity-enhanced (RCE) photodetectors
4. Bias-Free Operation of Type-II GaInAsSb/InP High Speed UniTraveling Carrier Photodiodes;chaudhary;2022 IEEE Photonics Conference (IPC),0
5. InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth
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