1. InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth
2. Electron transport in InP at high electric fields
3. Levi, A.F.: ‘InP HBTs: growth, processing, and applications’, (Artech House Boston 1995),4, p. 93
4. Ishibashi, T.: ‘High speed heterostructure devices’, Semiconductors and semimetals, 41, (Academic Press San Diego 1994),5, p. 333