InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19991043?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product
2. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz
3. Sze, S.M.: ‘Physics of semiconductor devices’, (John Wiley & Sons New York 1981), p. 159
4. Electron transport in InP at high electric fields
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