Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode-Reference-Cited by-同舟云学术

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Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode

Published:2022-09-23 Issue:10 Volume:4 Page:5034-5039
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhang Bojian¹,Liu Yingjian¹,Jiang Kai¹,Wang Fangli¹,Yang Muyi¹,Guo Songpo¹,Han Zhengfu¹²,Wang Liang¹²^ORCID

Affiliation:

1. Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026, China

2. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei City, Anhui Province 230026, China

Funder

Ministry of Science and Technology of the People's Republic of China

Anhui Provincial Department of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01052

Reference37 articles.

1. InP-Based High-Speed Photodetectors

2. 375‐GHz‐bandwidth photoconductive detector

3. Ultrasensitive solution-cast quantum dot photodetectors

4. Infrared detectors: status and trends

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