Physics-Informed Compact Model for SF6/O2 Plasma Etching
Author:
Affiliation:
1. CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors
2. TU Wien,Institute for Microelectronics,Vienna,Austria,1040
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319479.pdf?arnumber=10319479
Reference8 articles.
1. Feature-scale model of Si etching in SF6∕O2 plasma and comparison with experiments
2. Fast Model for Deposition in Trenches using Geometric Advection
3. Effect of Mask Geometry Variation on Plasma Etching Profiles
4. TCAD based design-technology co-optimisations in advanced technology nodes;asenov;Proc IEEE International Symposium on VLSI-DAT,2017
5. DTCO flow for air spacer generation and its impact on power and performance at N7
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