Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation-Reference-Cited by-同舟云学术

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Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

Published:2022-04-03 Issue: Volume: Page:
ISSN:
Container-title:2021 16th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

ElKashlan Rana¹,Khaled Ahmad¹,Rodriguez Raul¹,Putcha Vamsi¹,Peralagu Uthayasankaran¹,Alian AliReza¹,Collaert Nadine¹,Wambacq Piet²,Parvais Bertrand²

Affiliation:

1. Imec,Leuven,Belgium

2. VUB,Brussels,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783630.pdf?arnumber=9783630

Reference11 articles.

1. Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model

2. Soft compression and the origins of nonlinear behavior of GaN HEMTs;pedro;2014 9th European Microwave Integrated Circuit Conference,2014

3. Impact of Input Nonlinearity on Efficiency, Power, and Linearity Performance of GaN RF Power Amplifiers

4. Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness

5. Modeling the SOI MOSFET nonlinearities. An empirical approach

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages;IEEE Transactions on Electron Devices;2024-03

2. RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si;International Journal of Microwave and Wireless Technologies;2023-03-20

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